A▲l▼GaInP半導体発光素子
文献类型：专利
| 作者 | 小林 健一 |
| 发表日期 | 1996-10-03 |
| 专利号 | JP2564813B2 |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | A▲l▼GaInP半導体発光素子 |
| 英文摘要 | PURPOSE:To facilitate the manufacture of a semiconductor light emitting element by determining the thickness of a clad layer remaining on an active layer not by the thickness of the remaining film by etching but by the thickness of the clad layer laminated in advance to always control it constantly. CONSTITUTION:A double hetero structure composed of an active layer 1 and clad layers 2, 3 made of GalnP or AlGaInP is provided on a GaAs substrate 10. An etching stopper layer 7 made of AlGaAs is laminated thereon, and layers for forming a ridge-shaped guide mechanism made of AlGaInP clad layer 4, a current block layer 5 are laminated thereon. Thus, the difficulty of mesa etching process to occur in the step of manufacturing in the conventional case is eliminated. |
| 公开日期 | 1996-12-18 |
| 申请日期 | 1987-01-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42358]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | 小林 健一. A▲l▼GaInP半導体発光素子. JP2564813B2. 1996-10-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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