Semiconductor device and semiconductor light emitting device
文献类型：专利
| 作者 | OKUYAMA, HIROYUKI |
| 发表日期 | 2002-10-08 |
| 专利号 | US6462354 |
| 著作权人 | SONY CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor device and semiconductor light emitting device |
| 英文摘要 | There are provided a semiconductor light emitting device using high-quality and high-performance nitride III-V compound semiconductors which can reduce the threshold current density and operation voltage, and can shorten the emission wavelength to the ultraviolet range and a semiconductor device using nitride III-V compound semiconductors excellent in electric property and optical property and having a high band gap. In a GaN semiconductor light emitting device, desired layers among a plurality of semiconductor layers forming its light emitting structure are made of nitride III-V compound semiconductors containing B while limiting the B composition not higher than 0.3. More specifically, sequentially stacked on a c-plane sapphire substrate are, via a B0.05Ga0.95N buffer layer, a B0.05Ga0.95N layer, n-type B0.02Al0.03Ga0.95N cladding layer, n-type GaN optical guide layer, active layer having a MQW structure including quantum well layers of Ga0.85In0.15N, p-type B0.1Ga0.9N cap layer, p-type GaN optical guide layer, p-type B0.02Al0.03Ga0.95N cladding layer and p-type B0.02Ga0.96N contact layer. |
| 公开日期 | 2002-10-08 |
| 申请日期 | 2000-05-22 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42366]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORPORATION |
| 推荐引用方式 GB/T 7714 | OKUYAMA, HIROYUKI. Semiconductor device and semiconductor light emitting device. US6462354. 2002-10-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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