Radiation-emitting semiconductor diode and method of manufacturing same
文献类型：专利
| 作者 | VAN DER POEL, CAROLUS JOHANNES; VALSTER, ADRIAAN; AMBROSIUS, HUBERTUS PETRUS MECHTILDUS MARIA |
| 发表日期 | 1998-09-02 |
| 专利号 | EP0637112B1 |
| 著作权人 | PHILIPS ELECTRONICS N.V. |
| 国家 | 欧洲专利局 |
| 文献子类 | 授权发明 |
| 其他题名 | Radiation-emitting semiconductor diode and method of manufacturing same |
| 英文摘要 | Radiation-emitting semiconductor diodes are used as laser diodes or LEDs inter alia in optical disc systems, laser printers and bar code readers. The emission wavelength in these cases lies preferably in the visible range of the spectrum. Known diodes have an active layer (3A) and cladding layers (2,4) which comprise either AlGaAs or InAlGaP. These known diodes have the disadvantage that they do not cover a portion of the visible spectrum between 880 and 600 nm. A diode according to the invention is characterized in that the active layer (3A) comprises AlxGa1-xAs and the cladding layers (2,4) comprise AlyGawIn1-y-wP, while the active layer (3A) has such an aluminium content (x) and such a thickness (d) that the wavelength of the photoluminescence emission lies between approximately 770 and 690 nm. This results in the availability of (laser) diodes covering the entire spectrum from approximately 880 nm to 600 nm which operate satisfactorily, supply a high power, and are easy to manufacture. Preferably, the active layer comprises a (multiple) quantum well structure of alternating quantum well layers and barrier layers, both comprising AlGaAs, but with different aluminium contents. The active layer can also comprise AlGaAsP. |
| 公开日期 | 1998-09-02 |
| 申请日期 | 1994-06-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42371]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PHILIPS ELECTRONICS N.V. |
| 推荐引用方式 GB/T 7714 | VAN DER POEL, CAROLUS JOHANNES,VALSTER, ADRIAAN,AMBROSIUS, HUBERTUS PETRUS MECHTILDUS MARIA. Radiation-emitting semiconductor diode and method of manufacturing same. EP0637112B1. 1998-09-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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