Surface emitting semiconductor laser, and method and apparatus for fabricating the same
文献类型：专利
| 作者 | NAKAYAMA, HIDEO; SAKAMOTO, AKIRA |
| 发表日期 | 2007-01-02 |
| 专利号 | US7157298 |
| 著作权人 | AIR LIQUIDE AMERICA L.P. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Surface emitting semiconductor laser, and method and apparatus for fabricating the same |
| 英文摘要 | A method of fabricating a surface emitting semiconductor laser includes the following steps. A first laminate of semiconductor layers and a second laminate of semiconductor layers are formed on a substrate. The first laminate includes a first reflection mirror layer of a first conduction type, an active region, a III-V semiconductor layer containing Al, and a second reflection mirror layer of a second conduction type, the second laminate being used for monitoring and having an oxidizable region. The first and second laminates are etched so as to form mesas on the substrate in which side surface of the III-V semiconductor layer contained in the first laminate is exposed. Oxidization of the III-V semiconductor layer from the side surface is started at an oxidization rate. During oxidization, a reflectance of the second laminate for monitoring or its variation is monitored, and oxidization of the III-V semiconductor layer is terminated after a constant time from a time when the reflectance or its variation reaches a corresponding given value. |
| 公开日期 | 2007-01-02 |
| 申请日期 | 2003-03-11 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42377]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AIR LIQUIDE AMERICA L.P. |
| 推荐引用方式 GB/T 7714 | NAKAYAMA, HIDEO,SAKAMOTO, AKIRA. Surface emitting semiconductor laser, and method and apparatus for fabricating the same. US7157298. 2007-01-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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