GaAs/AL(Ga)As distributed bragg reflector on InP
文献类型：专利
| 作者 | KWON, HOKI |
| 发表日期 | 2004-11-23 |
| 专利号 | US6822995 |
| 著作权人 | FINISAR CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | GaAs/AL(Ga)As distributed bragg reflector on InP |
| 英文摘要 | A vertical cavity surface emitting laser having a GaAs/Al(Ga)As DBR mirror over an InP layer A first GaAs layer is MOCVD grown on an InP layer at a growth temperature of between 400 and 450° C. Then a second GaAs layer is grown by MOCVD at a growth temperature of about 600° C. over the first GaAs layer. A GaAs/Al(Ga)As DBR mirror is then grown over the second GaAs layer. Beneficially, an insulating layer is disposed between the second GaAs layer and the GaAs/Al(Ga)As DBR mirror. The insulating layer includes an opening that exposes the second GaAs layer. Then the GaAs/Al(Ga)As DBR mirror is grown by lateral epitaxial overgrowth. The lower DBR can be comprised of a material that provides an acceptable lattice match with InP layers. A tunnel junction can be formed over an InP active region. |
| 公开日期 | 2004-11-23 |
| 申请日期 | 2002-02-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42384]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FINISAR CORPORATION |
| 推荐引用方式 GB/T 7714 | KWON, HOKI. GaAs/AL(Ga)As distributed bragg reflector on InP. US6822995. 2004-11-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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