Wavelength-stabilized, high power semiconductor laser
文献类型：专利
| 作者 | MEHUYS, DAVID G.; WELCH, DAVID F.; LANG, ROBERT J.; SCIFRES, DONALD R. |
| 发表日期 | 1996-07-16 |
| 专利号 | US5537432 |
| 著作权人 | SDL, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Wavelength-stabilized, high power semiconductor laser |
| 英文摘要 | A wavelength-stabilized, semiconductor laser having a light amplifying diode heterostructure with a flared gain region in an external resonant cavity. The flared gain region has a narrow aperture end which may be coupled to a single mode waveguide and a wide output end. A light emitting surface of the heterostructure proximate to the wide end of the flared gain region is partially reflective and combines with an external reflector to form a resonant cavity that is effectively unstable. The intracavity light-emitting surface proximate to the narrow aperture end is antireflection coated. The external reflector may be a planar mirror or a grating reflector. A lens or an optical fiber may couple the aperture end of the flared gain region to the external reflector. Frequency-selective feedback is provided by orienting the grating reflector or providing a prism in the cavity in front of the external planar mirror. Other filtering elements may also be placed in the external cavity. The flared gain region and waveguide may be differentially pumped or modulated with current provided by separate contacts. |
| 公开日期 | 1996-07-16 |
| 申请日期 | 1995-02-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42390]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SDL, INC. |
| 推荐引用方式 GB/T 7714 | MEHUYS, DAVID G.,WELCH, DAVID F.,LANG, ROBERT J.,et al. Wavelength-stabilized, high power semiconductor laser. US5537432. 1996-07-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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