半導体レーザーの製造方法
文献类型：专利
| 作者 | 成井 啓修; 大畑 豊治; 森 芳文 |
| 发表日期 | 1998-09-04 |
| 专利号 | JP2822195B2 |
| 著作权人 | ソニー株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザーの製造方法 |
| 英文摘要 | PURPOSE:To improve an optical damage to a level by making a clad layer perform an epitaxial growth and causing vertical side faces of the clad layer which are formed by burying inverted mesa type side faces to be formed into a reflecting face, and into a light outgoing face by an active layer. CONSTITUTION:A ridge part 4 is provided at a semiconductor substrate 2 having an active layer 1 in such a manner that a pair of both end side faces which intersect the active layer 1 and are facing each other are formed into inverted mesa type side faces 3A and 3B because of each specific crystal face. A clad layer 6 including the inner parts of mesa grooves 5 having the inverted mesa type side faces 3A and 3B is allowed to perform an epitaxial growth and buries the above side faces 3A and 3B. Then its layer 6 forms vertical side faces 7A and 7B so that the side faces intersect almost perpendicularly to the facial direction of the active layer Further, the above faces 7A and 7B are formed into the reflecting face of a laser resonator, and into the outgoing face of the laser light by the active layer. Such an aperture structure in which the reflecting and outgoing faces are formed by the clad layer 6 thus improves an optical damage to a level. |
| 公开日期 | 1998-11-11 |
| 申请日期 | 1989-01-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42395]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ソニー株式会社 |
| 推荐引用方式 GB/T 7714 | 成井 啓修,大畑 豊治,森 芳文. 半導体レーザーの製造方法. JP2822195B2. 1998-09-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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