Semiconductor laser arrangement for high output powers in the lateral fundamental mode
文献类型：专利
| 作者 | HANKE, CHRISTIAN |
| 发表日期 | 1990-12-11 |
| 专利号 | US4977567 |
| 著作权人 | SIEMENS AKTIENGESELLSCHAFT |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser arrangement for high output powers in the lateral fundamental mode |
| 英文摘要 | A semiconductor laser arrangement for high output power in the lateral fundamental mode. A semiconductor laser region is provided in which a waveguide is provided for wave guidance, this waveguide being dimensioned such that the laser emission oscillates in the fundamental mode perpendicularly to its propagation direction. The arrangement has a coupling region, and an intensification region in which the lateral wave guidance is cancelled and is provided with a contact for current injection. |
| 公开日期 | 1990-12-11 |
| 申请日期 | 1989-10-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42398]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SIEMENS AKTIENGESELLSCHAFT |
| 推荐引用方式 GB/T 7714 | HANKE, CHRISTIAN. Semiconductor laser arrangement for high output powers in the lateral fundamental mode. US4977567. 1990-12-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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