High performance aluminum free active region semiconductor lasers
文献类型：专利
| 作者 | MAWST, LUKE J.; BOTEZ, DAN; AL-MUHANNA, ABDULRAHMAN; WADE, JEROME KENT |
| 发表日期 | 2001-04-17 |
| 专利号 | US6219365 |
| 著作权人 | WISCONSIN ALUMINI RESEARCH FOUNDATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | High performance aluminum free active region semiconductor lasers |
| 英文摘要 | The semiconductor laser emitting light in the wavelength range of about 700 nm to 800 nm utilizes an aluminum-free active region layer. An epitaxial structure is grown on a GaAs or AlGaAs substrate and includes an active region layer, confinement layers adjacent the active region layer, and cladding layers adjacent the confinement layers. The active region layer comprises at least one compressively strained InGaAsP quantum well surrounded by transitional layers, with the composition and width of the active region selected to emit light at a selected wavelength, particularly between about 700 nm and 800 nm. High band-gap InGaAlP cladding layers and confinement layers may be utilized to suppress carrier leakage, and the epitaxial structure may be grown on a misoriented substrate to further reduce carrier leakage from the quantum well and improve the crystalline quality of the quantum well. The lasers are capable of operating at high powers with high reliability for longer lifetimes than are obtainable with laser structures emitting the same wavelength range which require the use of aluminum in the active region. |
| 公开日期 | 2001-04-17 |
| 申请日期 | 1998-11-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42400]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | WISCONSIN ALUMINI RESEARCH FOUNDATION |
| 推荐引用方式 GB/T 7714 | MAWST, LUKE J.,BOTEZ, DAN,AL-MUHANNA, ABDULRAHMAN,et al. High performance aluminum free active region semiconductor lasers. US6219365. 2001-04-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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