Semiconductor superlattice heterostructures on non-planar substrates
文献类型:专利
作者 | KAPON, ELYAHOU |
发表日期 | 1991-08-13 |
专利号 | US5040032 |
著作权人 | BELL COMMUNICATIONS RESEARCH, INC. |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Semiconductor superlattice heterostructures on non-planar substrates |
英文摘要 | A novel quantum-well semiconductor is described wherein the quantum well is formed by growing a thin (=500 ANGSTROM ) epitaxial layer on a patterned (e.g. grooved) non-planar substrate so as to achieve thickness variations along the quantum well and hence laterally varying superlattice periodicity and QW depth. Using this structure one can achieve lateral carrier confinement and real refractive index waveguiding. Index-guided GaAs/AlGaAs lasers are described. |
公开日期 | 1991-08-13 |
申请日期 | 1990-08-28 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/42412] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | BELL COMMUNICATIONS RESEARCH, INC. |
推荐引用方式 GB/T 7714 | KAPON, ELYAHOU. Semiconductor superlattice heterostructures on non-planar substrates. US5040032. 1991-08-13. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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