Vertical cavity surface emitting laser with reduced turn-on jitter and increased single-mode output
文献类型：专利
| 作者 | CORZINE, SCOTT W.; TAN, MICHAEL R.T. |
| 发表日期 | 1999-02-02 |
| 专利号 | US5867516 |
| 著作权人 | AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Vertical cavity surface emitting laser with reduced turn-on jitter and increased single-mode output |
| 英文摘要 | A VCSEL that laser comprises a first mirror layer, an active layer including a quantum well region and a diffusion enhancing region, and a second mirror layer. The first and second mirror layers are layers of doped semiconductor material having a first and a second conductivity mode, respectively. The active layer is a layer of semiconductor material adjacent the first mirror layer. The second mirror layer is adjacent the active layer, remote from the first mirror layer. The diffusion enhancing region is a region of the active layer in which the semiconductor material of the active layer is doped with an acceptor impurity to such a high concentration that holes induced in the quantum well region by the diffusion enhancing region predominate over electrons in the quantum well region by about one order of magnitude. |
| 公开日期 | 1999-02-02 |
| 申请日期 | 1996-03-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42519]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD. |
| 推荐引用方式 GB/T 7714 | CORZINE, SCOTT W.,TAN, MICHAEL R.T.. Vertical cavity surface emitting laser with reduced turn-on jitter and increased single-mode output. US5867516. 1999-02-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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