Technique for a surface-emitting laser diode with a metal reflector
文献类型：专利
| 作者 | HORNG, RAY-HUA; WU, DONG-SING; PENG, WEI-CHIH; HO, WEN-JENG; HUANG, YING-SHUN |
| 发表日期 | 2003-12-02 |
| 专利号 | US6656756 |
| 著作权人 | TELECOMMUNICATION LABORATORIES, CHUNGHWA TELECOM CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Technique for a surface-emitting laser diode with a metal reflector |
| 英文摘要 | The present invention is related to a method for fabricating a surface-emitting laser diode with a metal reflector. It is mainly the use of a combination of a metal reflector and wafer bonding technology to replace the traditional epiwafer process or high-temperature high-pressure wafer bonding technology in fabricating VCSEL Bragg Reflector. The metal reflector has high reflectance with its material selected to form ohmic contact with VCSEL material. Besides, the substrate for the metal reflector can be selected for cheap price and good heat dissipation. Further advantages include simple process, low production cost and good VCSEL characteristic etc. |
| 公开日期 | 2003-12-02 |
| 申请日期 | 2001-08-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42540]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TELECOMMUNICATION LABORATORIES, CHUNGHWA TELECOM CO., LTD. |
| 推荐引用方式 GB/T 7714 | HORNG, RAY-HUA,WU, DONG-SING,PENG, WEI-CHIH,et al. Technique for a surface-emitting laser diode with a metal reflector. US6656756. 2003-12-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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