VCSEL pumped in a monolithically optical manner and comprising a laterally applied edge emitter
文献类型：专利
| 作者 | ALBRECHT, TONY; BRICK, PETER; LUTGEN, STEPHAN |
| 发表日期 | 2009-08-04 |
| 专利号 | US7570682 |
| 著作权人 | OSRAM OPTO SEMICONDUCTORS GMBH |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | VCSEL pumped in a monolithically optical manner and comprising a laterally applied edge emitter |
| 英文摘要 | A semiconductor laser device comprising an optically pumped surface-emitting vertical emitter region (2) which has an active radiation-emitting vertical emitter layer (3) and has at least one monolithically integrated pump radiation source (5) for optically pumping the vertical emitter region (2), which has an active radiation-emitting pump layer (6). The pump layer (6) follows the vertical emitter layer (3) in the vertical direction and a conductive layer (13) is provided between the vertical emitter layer (3) and the pump layer (6). Furthermore, a contact (9) is applied on the side of the semiconductor laser device which is closer to the pump layer (6) than to the conductive layer (13). An electrical field can be applied between this contact (9) and the conductive layer (13) for generating pump radiation (7) by charge carrier injection. |
| 公开日期 | 2009-08-04 |
| 申请日期 | 2004-11-09 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42554]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OSRAM OPTO SEMICONDUCTORS GMBH |
| 推荐引用方式 GB/T 7714 | ALBRECHT, TONY,BRICK, PETER,LUTGEN, STEPHAN. VCSEL pumped in a monolithically optical manner and comprising a laterally applied edge emitter. US7570682. 2009-08-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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