VCSEL and the fabrication method of the same
文献类型：专利
| 作者 | WU, YI-TSUO; WANG, JYH-SHYANG; LIN, KUN-FONG; MALEEV, NIKOLAI A.; LIVSHITS, DANIIL ALEXANDROVICH |
| 发表日期 | 2007-01-30 |
| 专利号 | US7169629 |
| 著作权人 | INDUSTRIAL TECHNOLGY RESEARCH INSTITUTE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | VCSEL and the fabrication method of the same |
| 英文摘要 | A fabrication method of VCSEL is used to form a contact electrode on a VCSEL in a resonance cavity. A heavily doped layer is formed in a resonance cavity where the light intensity is the weakest. A Bragg reflector is etched while the etching stop point being above the heavily doped layer. Dopants are doped to form a high-carrier-concentration ohmic channel as a connection between an electrode and the heavily doped layer. Thereby, a contact electrode is formed on the VCSEL structure in the resonance cavity without the need of high etching precision. |
| 公开日期 | 2007-01-30 |
| 申请日期 | 2004-02-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42857]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INDUSTRIAL TECHNOLGY RESEARCH INSTITUTE |
| 推荐引用方式 GB/T 7714 | WU, YI-TSUO,WANG, JYH-SHYANG,LIN, KUN-FONG,et al. VCSEL and the fabrication method of the same. US7169629. 2007-01-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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