VCSEL with reduced light scattering within optical cavity
文献类型：专利
| 作者 | ONISHI, YUTAKA |
| 发表日期 | 2010-12-14 |
| 专利号 | US7852895 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | VCSEL with reduced light scattering within optical cavity |
| 英文摘要 | A VCSEL with a structure able to reduce the scattering within the optical cavity and its manufacturing method are disclosed. The VCSEL of the present invention provides, on the semiconductor substrate, the first DBR, the active layer, the p-type spacer layer, the heavily doped p-type mesa, the heavily doped n-type layer, the first n-type spacer and the second DBR in this order. The heavily doped n-type layer, which is formed so as to cover the p-type spacer layer and the heavily doped p-type mesa, forms the tunnel junction with respect to the heavily doped p-type mesa. Because the height, which is appeared in the surface of the n-type spacer layer, reflects the height of the heavily doped p-type mesa and is comparatively small, the light scattering between the second DBR and the n-type spacer layer is suppressed. |
| 公开日期 | 2010-12-14 |
| 申请日期 | 2009-02-25 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42935]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | ONISHI, YUTAKA. VCSEL with reduced light scattering within optical cavity. US7852895. 2010-12-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。