Surface-emitting semiconductor laser and method for manufacturing thereof as well as optical device
文献类型:专利
作者 | BABA, TOSHIHIKO; MATSUZONO, ATSUSHI; FURUKAWA, AKIO; SASAKI, SATOSHI; HOSHI, MITSUNARI |
发表日期 | 2012-12-26 |
专利号 | EP1528647B1 |
著作权人 | SONY CORPORATION |
国家 | 欧洲专利局 |
文献子类 | 授权发明 |
其他题名 | Surface-emitting semiconductor laser and method for manufacturing thereof as well as optical device |
英文摘要 | A surface-emitting semiconductor laser (VCSEL) having a structure in which the single horizontal mode of high power is stably maintained, and an optical device including a light-source device having this surface-emitting semiconductor laser are provided. A scattering-loss-structure portion composed of a low refractive-index region is disposed around a main current path in a surface-emitting semiconductor laser, namely around a cavity structure portion; the low refractive-index region is disposed at intervals; and the shape of the tip portion opposing to the center portion is set to be a tapered shape, for example, at an acute angle. Accordingly, in the cavity structure portion, the loss of light-emitting laser of a high-order mode localized in the outer circumferential portion becomes large, so that a surface-emitting semiconductor laser that oscillates the single-mode laser with favorable performance is constructed. |
公开日期 | 2012-12-26 |
申请日期 | 2004-10-27 |
状态 | 授权 |
源URL | [http://ir.opt.ac.cn/handle/181661/42992] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | SONY CORPORATION |
推荐引用方式 GB/T 7714 | BABA, TOSHIHIKO,MATSUZONO, ATSUSHI,FURUKAWA, AKIO,et al. Surface-emitting semiconductor laser and method for manufacturing thereof as well as optical device. EP1528647B1. 2012-12-26. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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