中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Surface-emitting semiconductor laser and method for manufacturing thereof as well as optical device

文献类型:专利

作者BABA, TOSHIHIKO; MATSUZONO, ATSUSHI; FURUKAWA, AKIO; SASAKI, SATOSHI; HOSHI, MITSUNARI
发表日期2012-12-26
专利号EP1528647B1
著作权人SONY CORPORATION
国家欧洲专利局
文献子类授权发明
其他题名Surface-emitting semiconductor laser and method for manufacturing thereof as well as optical device
英文摘要A surface-emitting semiconductor laser (VCSEL) having a structure in which the single horizontal mode of high power is stably maintained, and an optical device including a light-source device having this surface-emitting semiconductor laser are provided. A scattering-loss-structure portion composed of a low refractive-index region is disposed around a main current path in a surface-emitting semiconductor laser, namely around a cavity structure portion; the low refractive-index region is disposed at intervals; and the shape of the tip portion opposing to the center portion is set to be a tapered shape, for example, at an acute angle. Accordingly, in the cavity structure portion, the loss of light-emitting laser of a high-order mode localized in the outer circumferential portion becomes large, so that a surface-emitting semiconductor laser that oscillates the single-mode laser with favorable performance is constructed.
公开日期2012-12-26
申请日期2004-10-27
状态授权
源URL[http://ir.opt.ac.cn/handle/181661/42992]  
专题半导体激光器专利数据库
作者单位SONY CORPORATION
推荐引用方式
GB/T 7714
BABA, TOSHIHIKO,MATSUZONO, ATSUSHI,FURUKAWA, AKIO,et al. Surface-emitting semiconductor laser and method for manufacturing thereof as well as optical device. EP1528647B1. 2012-12-26.

入库方式: OAI收割

来源:西安光学精密机械研究所

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