Method of fabricating long-wavelength VCSEL and apparatus
文献类型：专利
| 作者 | SHIEH, CHAN-LONG |
| 发表日期 | 2005-02-08 |
| 专利号 | US6852557 |
| 著作权人 | JDS UNIPHASE CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of fabricating long-wavelength VCSEL and apparatus |
| 英文摘要 | A long-wavelength VCSEL, and method of fabrication, includes a long-wavelength active region epitaxially grown on a compatible substrate with a high heat conductivity DBR mirror stack metamorphically grown on the active region. A supporting substrate is bonded to the DBR mirror stack and the compatible substrate is removed. A second mirror stack, either a DBR or a dielectric mirror stack, is formed on the opposite surface of the active region. Preferably, an InP based active region is grown on an InP based substrate and an AlAs/GaAs based metamorphic DBR mirror stack is metamorphically grown on the active region. The supporting substrate may be either an InP based substrate bonded to the active region or a layer of plated metal, such as copper, silver, gold, nickel, aluminum, etc. |
| 公开日期 | 2005-02-08 |
| 申请日期 | 2003-07-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43059]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | JDS UNIPHASE CORPORATION |
| 推荐引用方式 GB/T 7714 | SHIEH, CHAN-LONG. Method of fabricating long-wavelength VCSEL and apparatus. US6852557. 2005-02-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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