Tunnel junctions for long-wavelength VCSELs
文献类型：专利
| 作者 | BHAT, RAJARAM; NISHIYAMA, NOBUHIKO |
| 发表日期 | 2005-08-23 |
| 专利号 | US6933539 |
| 著作权人 | THORLABS QUANTUM ELECTRONICS, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Tunnel junctions for long-wavelength VCSELs |
| 英文摘要 | A tunnel junction device (102) with minimal hydrogen passivation of acceptors includes a p-type tunnel junction layer (106) of a first semiconductor material doped with carbon. The first semiconductor material includes aluminum, gallium, arsenic and antimony. An n-type tunnel junction layer (104) of a second semiconductor material includes indium, gallium, arsenic and one of aluminum and phosphorous. The junction between the p-type and an-type tunnel junction layers forms a tunnel junction (110). |
| 公开日期 | 2005-08-23 |
| 申请日期 | 2004-05-17 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43117]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THORLABS QUANTUM ELECTRONICS, INC. |
| 推荐引用方式 GB/T 7714 | BHAT, RAJARAM,NISHIYAMA, NOBUHIKO. Tunnel junctions for long-wavelength VCSELs. US6933539. 2005-08-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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