Negative differential resistance behavior of silicon monatomic chain encapsulated in carbon nanotubes
文献类型：期刊论文
| 作者 | Zhang YY(张营营) ; Wang FC(王奉超); Zhao YP(赵亚溥); Zhao, YP; Zhao, YP
|
| 刊名 | COMPUTATIONAL MATERIALS SCIENCE
 |
| 出版日期 | 2012-09-01 |
| 卷号 | 62页码:87-92 |
| 通讯作者邮箱 | yzhao@imech.ac.cn |
| 关键词 | Silicon monatomic chain Size-selective encapsulation Electronic transport properties Negative differential resistance Transmission spectrum Field-Effect Transistors Single Nanowires Simulations |
| ISSN号 | 0927-0256 |
| 产权排序 | [Zhang, Yingying;Wang, Feng-Chao; Zhao, Ya-Pu] Chinese Acad Sci, Inst Mech, State Key Lab Nonlinear Mech, Beijing 100190, Peoples R China |
| 通讯作者 | Zhao, YP ; Chinese Acad Sci, Inst Mech, State Key Lab Nonlinear Mech, Beijing 100190, Peoples R China. |
| 中文摘要 | Using nonequilibrium Green's functions in combination with density-functional theory (DFT), we investigated the electronic transport properties of the silicon monatomic chains (SiMCs) with different geometries which were induced by the encapsulation of the carbon nanotubes (CNTs). The encapsulated SiMCs, which were put inside (5,5), (6,6), (7,7) and (8,8) hydrogenated armchair CNTs, were coupled to two Au (1 0 0) nanoscale electrodes. The electronic transport property of an isolated finite SiMC was also studied to serve as a reference to our calculations. As the diameter of CNTs increases, the geometry structures of SiMCs changed. Calculated results show that the current-voltage (I-V) characteristics depend sensitively on the geometry structures of SiMCs and can be controlled by the size-selective encapsulation. Negative differential resistance (NDR) phenomena were observed within certain bias voltage ranges. A detailed analysis of the origin of NDR was carried out with the transmission spectrum, the spatial distribution of frontier molecular orbitals and the molecular projected self-consistent Hamiltonian (MPSH) states taken into consideration. These results indicated that the size-selective encapsulation of SiMCs in CNTs can become a possible candidate for designing the silicon-based nanoelectronic devices. |
| 学科主题 | 物理力学 |
| 分类号 | 二类/Q2 |
| 收录类别 | SCI ; EI |
| 资助信息 | This work was supported by the National Natural Science Foundation of China (NSFC, Grant No. 60936001). This work was supported by the National Natural Science Foundation of China (NSFC, Grant Nos. 60936001 and 11021262). |
| 原文出处 | http://dx.doi.org/10.1016/j.commatsci.2012.04.050 |
| 语种 | 英语 |
| WOS记录号 | WOS:000306106000014 |
| 公开日期 | 2013-01-18 |
| 源URL | [http://dspace.imech.ac.cn/handle/311007/46713]  |
| 专题 | 力学研究所_非线性力学国家重点实验室 |
| 通讯作者 | Zhao, YP; Zhao, YP |
| 推荐引用方式 GB/T 7714 | Zhang YY,Wang FC,Zhao YP,et al. Negative differential resistance behavior of silicon monatomic chain encapsulated in carbon nanotubes[J]. COMPUTATIONAL MATERIALS SCIENCE,2012,62:87-92. |
| APA | 张营营,王奉超,赵亚溥,Zhao, YP,&Zhao, YP.(2012).Negative differential resistance behavior of silicon monatomic chain encapsulated in carbon nanotubes.COMPUTATIONAL MATERIALS SCIENCE,62,87-92. |
| MLA | 张营营,et al."Negative differential resistance behavior of silicon monatomic chain encapsulated in carbon nanotubes".COMPUTATIONAL MATERIALS SCIENCE 62(2012):87-92. |
入库方式： OAI收割
来源：力学研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。