中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页 机构 成果 学者
  
  1. CAS IR Grid
  2. 计算技术研究所
  3. 中国科学院计算技术研究所
  4. 中国科学院计算技术研究所期刊论文
  5. 英文
An Adaptive Thermal-Aware ECC Scheme for Reliable STT-MRAM LLC Design

文献类型：期刊论文

作者Wu, Bi2,3; Zhang, Beibei4; Cheng, Yuanqing4; Wang, Ying1; Liu, Dijun5; Zhao, Weisheng2,3
刊名IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS
出版日期2019-08-01
卷号27期号:8页码:1851-1860
关键词Error correction code (ECC) last level cache (LLC) reliability spin-transfer-torque magnetoresistive random-access memory (STT-MRAM) temperature
ISSN号1063-8210
DOI10.1109/TVLSI.2019.2913207
英文摘要Considering the insatiable demand for high-performance computing, on-chip cache capacity increases rapidly. Spin-transfer-torque magnetoresistive random-access memory (STT-MRAM) is a promising cache candidate due to ultralow standby power, high-access speed, and integration density. Unfortunately, when the feature size of magnetic tunnel junction (MTJ) scales down to 1 Xnm, read current approaches write current closely, which may result in read disturbance threatening the reliability of STT-MRAM. Furthermore, the elevating on-chip temperature reduces the thermal stability of STTM-RAM remarkably and aggravates the read disturbance. Error correction code (ECC) is an effective technique to enhance memory reliability. In this paper, we take advantage of the thermal dependence of STT-MRAM and propose a thermally adaptive ECC design, called "Chameleon," that can adjust the ECC protection strength dynamically to reduce the ECC storage overhead and improve the cache access performance and energy efficiency. Experimental results show that compared to the conservative nonadaptive ECC scheme, our design can improve both cache performance and energy consumption effectively.
资助项目National Natural Science Foundation of China[61401008] ; National Natural Science Foundation of China[61704005] ; National Natural Science Foundation of China[61571023] ; Beijing Natural Science Foundation[4192035] ; Science, Technology and Innovation Commission of Shenzhen Municipality[JCYJ20180307123657364] ; International Collaboration[B16001] ; National Key Technology Program of China[2017ZX01032101] ; State Key Laboratory of Computer Architecture, Institute of Computing Technology, Chinese Academy of Sciences[CARCH201602]
WOS研究方向Computer Science ; Engineering
语种英语
WOS记录号WOS:000477733400013
出版者IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
源URL[http://119.78.100.204/handle/2XEOYT63/4471]  
专题中国科学院计算技术研究所期刊论文_英文
通讯作者Zhao, Weisheng
作者单位1.Chinese Acad Sci, Inst Comp Technol, Beijing 100190, Peoples R China
2.BDBC, Fert Beijing Inst, Beijing 100191, Peoples R China
3.Beihang Univ, Sch Microeletron, Beijing 100191, Peoples R China
4.Beihang Univ, Sch Microelect, Beijing 100191, Peoples R China
5.CAICT, Beijing 100190, Peoples R China
推荐引用方式
GB/T 7714		 Wu, Bi,Zhang, Beibei,Cheng, Yuanqing,et al. An Adaptive Thermal-Aware ECC Scheme for Reliable STT-MRAM LLC Design[J]. IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS,2019,27(8):1851-1860.
APA Wu, Bi,Zhang, Beibei,Cheng, Yuanqing,Wang, Ying,Liu, Dijun,&Zhao, Weisheng.(2019).An Adaptive Thermal-Aware ECC Scheme for Reliable STT-MRAM LLC Design.IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS,27(8),1851-1860.
MLA Wu, Bi,et al."An Adaptive Thermal-Aware ECC Scheme for Reliable STT-MRAM LLC Design".IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS 27.8(2019):1851-1860.

入库方式： OAI收割

来源：计算技术研究所

浏览0
下载0
收藏0
其他版本

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。