中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
I-DDT testing versus I-DDQ testing

文献类型:期刊论文

作者Min, YH; Li, ZC
刊名JOURNAL OF ELECTRONIC TESTING-THEORY AND APPLICATIONS
出版日期1998-08-01
卷号13期号:1页码:51-55
关键词I-DDQ test Boolean process stuck-open fault I-DDT test
ISSN号0923-8174
英文摘要I-DDQ testing has progressed to become a worldwide accepted test method to detect CMOS IC defects. However, it is noticed that observing the average transient current can lead to improvements in real defect coverage, which is referred to I-DDT testing. This letter presents a formal procedure to identify I-DDT testable faults, and to generate input vector pairs to detect the faults based on Boolean process. It is interesting to note that those faults may not be detected by I-DDQ or other test methods, which shows the significance of I-DDT testing.
WOS研究方向Engineering
语种英语
WOS记录号WOS:000077635800006
出版者KLUWER ACADEMIC PUBL
源URL[http://119.78.100.204/handle/2XEOYT63/13276]  
专题中国科学院计算技术研究所期刊论文_英文
通讯作者Min, YH
作者单位Chinese Acad Sci, Comp Technol Inst, CAD Lab, Ctr Fault Tolerant Comp, Beijing 100080, Peoples R China
推荐引用方式
GB/T 7714
Min, YH,Li, ZC. I-DDT testing versus I-DDQ testing[J]. JOURNAL OF ELECTRONIC TESTING-THEORY AND APPLICATIONS,1998,13(1):51-55.
APA Min, YH,&Li, ZC.(1998).I-DDT testing versus I-DDQ testing.JOURNAL OF ELECTRONIC TESTING-THEORY AND APPLICATIONS,13(1),51-55.
MLA Min, YH,et al."I-DDT testing versus I-DDQ testing".JOURNAL OF ELECTRONIC TESTING-THEORY AND APPLICATIONS 13.1(1998):51-55.

入库方式: OAI收割

来源:计算技术研究所

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