Threshold voltage’s dependence on channel width in nano-channel array AlGaN/GaN HEMTs
文献类型：期刊论文
| 作者 | Hua Qin（秦华） ; Yong Cai（蔡勇）; Wenhua Shi（时文华）; Yong Cai（蔡勇）; Baoshun Zhang (张宝顺); Chunhong Zeng（曾春红）
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| 刊名 | Physica Status Solidi C
 |
| 出版日期 | 2012-12-07 |
| 卷号 | 9期号:3-4 |
| 关键词 | AlGaN/GaN HEMT nano-channel array E-mode threshold voltage |
| 通讯作者 | Yong Cai（蔡勇） |
| 英文摘要 | In this paper, we demonstrate a nano-channel array (NCA) structure to realize the control of threshold voltage (Vth) of AlGaN/GaN HEMTs. The fabricated NCA structure consists of multiple nano-channels parallelly connected together. Using this structure, the Vth of AlGaN/GaN HEMTs can be systematically shifted from -3.92 V for a conventional depletion-mode (D-mode) AlGaN/GaN HEMT to 0.15 V for an enhancement-mode (E-mode) AlGaN/GaN HEMT. Besides, an optimum maximum peak transconductance of 235 mS/mm was achieved at the nano-channel width of 224 nm, which is almost two times larger than that of C-HEMT. |
| 语种 | 英语 |
| 公开日期 | 2013-01-22 |
| 源URL | [http://58.210.77.100/handle/332007/965]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米加工公共平台 |
| 通讯作者 | Yong Cai（蔡勇）; Yong Cai（蔡勇） |
| 推荐引用方式 GB/T 7714 | Hua Qin,Yong Cai,Wenhua Shi,et al. Threshold voltage’s dependence on channel width in nano-channel array AlGaN/GaN HEMTs[J]. Physica Status Solidi C,2012,9(3-4). |
| APA | Hua Qin,Yong Cai,Wenhua Shi,Yong Cai,Baoshun Zhang ,&Chunhong Zeng.(2012).Threshold voltage’s dependence on channel width in nano-channel array AlGaN/GaN HEMTs.Physica Status Solidi C,9(3-4). |
| MLA | Hua Qin,et al."Threshold voltage’s dependence on channel width in nano-channel array AlGaN/GaN HEMTs".Physica Status Solidi C 9.3-4(2012). |
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