Enhancement-Mode InAlN/GaN MISHEMT with Low Gate Leakage Current
文献类型：期刊论文
| 作者 | Zhang BS(张宝顺) ; Cai Y(蔡勇); Ceng CH(曾春红)
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| 刊名 | Journal of Semiconductors
 |
| 出版日期 | 2012-06 |
| 卷号 | 33期号:6 |
| 关键词 | enhancement-mode InAlN/GaN HEMT threshold voltage thermal oxidation gate leakage |
| 英文摘要 | We report an enhancement-mode InAlN/GaN MISHEMT with a low gate leakage current by a thermal oxidation technique under gate.The off-state source-drain current density is as low as～10~(17) A/mm at V_(GS)= 0 V and V_(DS) = 5 V.The threshold voltage is measured to be +0.8 V by linear extrapolation from the transfer characteristics.The E-mode device exhibits a peak transconductance of 179 mS/mm at a gate bias of 3.4 V.A low reverse gate leakage current density of 4.9×10~(17) A/mm is measured at V_(GS) =-15 V. |
| 语种 | 英语 |
| 公开日期 | 2013-01-22 |
| 源URL | [http://58.210.77.100/handle/332007/993]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米加工公共平台 |
| 推荐引用方式 GB/T 7714 | Zhang BS,Cai Y,Ceng CH. Enhancement-Mode InAlN/GaN MISHEMT with Low Gate Leakage Current[J]. Journal of Semiconductors,2012,33(6). |
| APA | Zhang BS,Cai Y,&Ceng CH.(2012).Enhancement-Mode InAlN/GaN MISHEMT with Low Gate Leakage Current.Journal of Semiconductors,33(6). |
| MLA | Zhang BS,et al."Enhancement-Mode InAlN/GaN MISHEMT with Low Gate Leakage Current".Journal of Semiconductors 33.6(2012). |
入库方式： OAI收割
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