Electrophilic Reaction Mechanism for Alkyl Monolayer Formation Initiated at Isolated Dangling Bonds of the H-GaN (0001) Surface: A Periodic Density Functional Theory Study
文献类型：期刊论文
| 作者 | C. L. Hu ; J. Q. Li ; Y. Chen and W. F. Wang |
| 刊名 | Journal of Physical Chemistry C
 |
| 出版日期 | 2008-10 |
| 卷号 | 112期号:43页码:16932-16937 |
| 关键词 | gan(0001) surface adsorption silicon molecules model chemisorption |
| ISSN号 | 1932-7447 |
| 收录类别 | SCI |
| 原文出处 | http://pubs.acs.org/doi/pdfplus/10.1021/jp800325f |
| 语种 | 英语 |
| 公开日期 | 2013-01-22 |
| 源URL | [http://ir.fjirsm.ac.cn/handle/350002/5478]  |
| 专题 | 福建物质结构研究所_中科院福建物质结构研究所_期刊论文 |
| 推荐引用方式 GB/T 7714 | C. L. Hu,J. Q. Li,Y. Chen and W. F. Wang. Electrophilic Reaction Mechanism for Alkyl Monolayer Formation Initiated at Isolated Dangling Bonds of the H-GaN (0001) Surface: A Periodic Density Functional Theory Study[J]. Journal of Physical Chemistry C,2008,112(43):16932-16937. |
| APA | C. L. Hu,J. Q. Li,&Y. Chen and W. F. Wang.(2008).Electrophilic Reaction Mechanism for Alkyl Monolayer Formation Initiated at Isolated Dangling Bonds of the H-GaN (0001) Surface: A Periodic Density Functional Theory Study.Journal of Physical Chemistry C,112(43),16932-16937. |
| MLA | C. L. Hu,et al."Electrophilic Reaction Mechanism for Alkyl Monolayer Formation Initiated at Isolated Dangling Bonds of the H-GaN (0001) Surface: A Periodic Density Functional Theory Study".Journal of Physical Chemistry C 112.43(2008):16932-16937. |
入库方式： OAI收割
来源：福建物质结构研究所
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