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Chinese Academy of Sciences Institutional Repositories Grid
First-principles calculations of ethanethiol adsorption and decomposition on GaN (0001) surface

文献类型:期刊论文

作者C. L. Hu ; Y. Chen ; J. Q. Li and Y. F. Zhang
刊名Applied Surface Science
出版日期2008-08
卷号254期号:20页码:6514-6520
关键词GaN (0001) surface ethanethiol DFT adsorption packing structure thermal decomposition self-assembled monolayers bare semiconductor surfaces density-functional theory au(111) molecules chemisorption interface sulfur energy
ISSN号0169-4332
收录类别SCI
原文出处http://ac.els-cdn.com/S0169433208007204/1-s2.0-S0169433208007204-main.pdf?_tid=4e436314-3f56-11e2-b392-00000aacb362&acdnat=1354765248_be4968abe7b7d501091e14033afa8b2e
语种英语
公开日期2013-01-22
源URL[http://ir.fjirsm.ac.cn/handle/350002/5480]  
专题福建物质结构研究所_中科院福建物质结构研究所_期刊论文
推荐引用方式
GB/T 7714
C. L. Hu,Y. Chen,J. Q. Li and Y. F. Zhang. First-principles calculations of ethanethiol adsorption and decomposition on GaN (0001) surface[J]. Applied Surface Science,2008,254(20):6514-6520.
APA C. L. Hu,Y. Chen,&J. Q. Li and Y. F. Zhang.(2008).First-principles calculations of ethanethiol adsorption and decomposition on GaN (0001) surface.Applied Surface Science,254(20),6514-6520.
MLA C. L. Hu,et al."First-principles calculations of ethanethiol adsorption and decomposition on GaN (0001) surface".Applied Surface Science 254.20(2008):6514-6520.

入库方式: OAI收割

来源:福建物质结构研究所

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