中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Electronic structures and optical properties of wurtzite type LiBSe2 (B = Al, Ga, In): A first-principles study

文献类型:期刊论文

作者L. H. Li ; J. Q. Li and L. M. Wu
刊名Journal of Solid State Chemistry
出版日期2008-09
卷号181期号:9页码:2462-2468
关键词DFT wurtzite type selenides electronic structure band gap mid-ir single-crystal liinse2 pseudopotentials chalcogenides ligase2 lilnse2 growth te se
ISSN号0022-4596
收录类别SCI
原文出处http://ac.els-cdn.com/S0022459608002934/1-s2.0-S0022459608002934-main.pdf?_tid=d6abc812-3f75-11e2-bff1-00000aacb35e&acdnat=1354778792_c7ee1c677e00346e3e292dfc6666fc75
语种英语
公开日期2013-01-22
源URL[http://ir.fjirsm.ac.cn/handle/350002/5580]  
专题福建物质结构研究所_中科院福建物质结构研究所_期刊论文
推荐引用方式
GB/T 7714
L. H. Li,J. Q. Li and L. M. Wu. Electronic structures and optical properties of wurtzite type LiBSe2 (B = Al, Ga, In): A first-principles study[J]. Journal of Solid State Chemistry,2008,181(9):2462-2468.
APA L. H. Li,&J. Q. Li and L. M. Wu.(2008).Electronic structures and optical properties of wurtzite type LiBSe2 (B = Al, Ga, In): A first-principles study.Journal of Solid State Chemistry,181(9),2462-2468.
MLA L. H. Li,et al."Electronic structures and optical properties of wurtzite type LiBSe2 (B = Al, Ga, In): A first-principles study".Journal of Solid State Chemistry 181.9(2008):2462-2468.

入库方式: OAI收割

来源:福建物质结构研究所

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