Characterization of 4H-SiC substrates and epilayers by Fourier transform infrared reflectance spectroscopy
文献类型:期刊论文
作者 | Dong, L ; Sun, GS ; Zheng, L ; Liu, XF ; Zhang, F ; Yan, GG ; Zhao, WS ; Wang, L ; Li, XG ; Wang, ZG |
刊名 | chinese physics b
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出版日期 | 2012 |
卷号 | 21期号:4页码:47802 |
学科主题 | 半导体材料 |
收录类别 | SCI |
公开日期 | 2013-02-07 |
源URL | [http://ir.semi.ac.cn/handle/172111/23554] ![]() |
专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
推荐引用方式 GB/T 7714 | Dong, L,Sun, GS,Zheng, L,et al. Characterization of 4H-SiC substrates and epilayers by Fourier transform infrared reflectance spectroscopy[J]. chinese physics b,2012,21(4):47802. |
APA | Dong, L.,Sun, GS.,Zheng, L.,Liu, XF.,Zhang, F.,...&Wang, ZG.(2012).Characterization of 4H-SiC substrates and epilayers by Fourier transform infrared reflectance spectroscopy.chinese physics b,21(4),47802. |
MLA | Dong, L,et al."Characterization of 4H-SiC substrates and epilayers by Fourier transform infrared reflectance spectroscopy".chinese physics b 21.4(2012):47802. |
入库方式: OAI收割
来源:半导体研究所
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