中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Characterization of 4H-SiC substrates and epilayers by Fourier transform infrared reflectance spectroscopy

文献类型:期刊论文

作者Dong, L ; Sun, GS ; Zheng, L ; Liu, XF ; Zhang, F ; Yan, GG ; Zhao, WS ; Wang, L ; Li, XG ; Wang, ZG
刊名chinese physics b
出版日期2012
卷号21期号:4页码:47802
学科主题半导体材料
收录类别SCI
公开日期2013-02-07
源URL[http://ir.semi.ac.cn/handle/172111/23554]  
专题半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式
GB/T 7714
Dong, L,Sun, GS,Zheng, L,et al. Characterization of 4H-SiC substrates and epilayers by Fourier transform infrared reflectance spectroscopy[J]. chinese physics b,2012,21(4):47802.
APA Dong, L.,Sun, GS.,Zheng, L.,Liu, XF.,Zhang, F.,...&Wang, ZG.(2012).Characterization of 4H-SiC substrates and epilayers by Fourier transform infrared reflectance spectroscopy.chinese physics b,21(4),47802.
MLA Dong, L,et al."Characterization of 4H-SiC substrates and epilayers by Fourier transform infrared reflectance spectroscopy".chinese physics b 21.4(2012):47802.

入库方式: OAI收割

来源:半导体研究所

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