中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Nanocrystalline silicon thin films grown by a MF twin magnetron sputtering system with two solenoid coils

文献类型:期刊论文

作者J. H. Gao ; L. Zhang ; J. Q. Xiao ; J. Gong ; C. Sun ; L. S. Wen
刊名Materials Letters
出版日期2012
卷号68页码:367-369
关键词Nanocrystalline silicon Thin films Solenoid coil Sputtering microcrystalline silicon fabrication deposition layer tool
ISSN号0167-577X
中文摘要A mid-frequency (MF) twin magnetron sputtering system combined with two external solenoid coils was developed to prepare nanocrystalline silicon (nc-Si) thin films. By varying the current strength of solenoid coils, different plasma conditions near substrate surface in an argon discharge were accomplished. Under different coil currents and Ar pressures, nc-Si films were successfully prepared and the maximal deposition rate reached around 30 nm/min with a power density of 1 W/cm(2). X-ray diffraction (XRD) analysis indicated that these films had a strong preferential growth along the (111) plane. The silicon film deposited at 1 Pa and 5.5 A showed a typical compact nanostructure of an nc-Si film. These results imply that the MF twin magnetron sputtering technique assisted by external magnetic fields is a potential method for the rapid deposition of high-quality nc-Si films. (C) 2011 Elsevier B.V. All rights reserved.
原文出处://WOS:000300480600105
公开日期2013-02-05
源URL[http://ir.imr.ac.cn/handle/321006/59957]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
J. H. Gao,L. Zhang,J. Q. Xiao,et al. Nanocrystalline silicon thin films grown by a MF twin magnetron sputtering system with two solenoid coils[J]. Materials Letters,2012,68:367-369.
APA J. H. Gao,L. Zhang,J. Q. Xiao,J. Gong,C. Sun,&L. S. Wen.(2012).Nanocrystalline silicon thin films grown by a MF twin magnetron sputtering system with two solenoid coils.Materials Letters,68,367-369.
MLA J. H. Gao,et al."Nanocrystalline silicon thin films grown by a MF twin magnetron sputtering system with two solenoid coils".Materials Letters 68(2012):367-369.

入库方式: OAI收割

来源:金属研究所

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