Enrichment of Semiconducting Single-Walled Carbon Nanotubes by Carbothermic Reaction for Use in All-Nanotube Field Effect Transistors
文献类型：期刊论文
| 作者 | S. S. Li ; C. Liu ; P. X. Hou ; D. M. Sun ; H. M. Cheng |
| 刊名 | Acs Nano
 |
| 出版日期 | 2012 |
| 卷号 | 6期号:11页码:9657-9661 |
| 关键词 | single-walled carbon nanotubes carbothermic reaction field effect transistors preferential growth circuits |
| ISSN号 | 1936-0851 |
| 中文摘要 | Selective removal of metallic single-walled carbon nanotubes (SWCNTs) and consequent enrichment of semiconducting SWCNTs were achieved through an efficient carbothermic reaction with a NiO thin film at a relatively low temperature of 350 degrees C. All-SWCNT field effect transistors (FETs) were fabricated with the aid of a patterned NiO mask, in which the as-grown SWCNTs behaving as source/drain electrodes and the remaining semiconducting SWCNTs that survive in the carbothermic reaction as a channel material. The all-SWCNT FETs demonstrate improved current ON/OFF ratios of similar to 10(3). |
| 原文出处 | |
| 公开日期 | 2013-02-05 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/60068]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | S. S. Li,C. Liu,P. X. Hou,et al. Enrichment of Semiconducting Single-Walled Carbon Nanotubes by Carbothermic Reaction for Use in All-Nanotube Field Effect Transistors[J]. Acs Nano,2012,6(11):9657-9661. |
| APA | S. S. Li,C. Liu,P. X. Hou,D. M. Sun,&H. M. Cheng.(2012).Enrichment of Semiconducting Single-Walled Carbon Nanotubes by Carbothermic Reaction for Use in All-Nanotube Field Effect Transistors.Acs Nano,6(11),9657-9661. |
| MLA | S. S. Li,et al."Enrichment of Semiconducting Single-Walled Carbon Nanotubes by Carbothermic Reaction for Use in All-Nanotube Field Effect Transistors".Acs Nano 6.11(2012):9657-9661. |
入库方式： OAI收割
来源：金属研究所
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