Microstructure and cathodoluminescence study of GaN nanowires without/with P-doping
文献类型：期刊论文
| 作者 | B. D. Liu ; T. Hu ; Z. E. Wang ; L. Z. Liu ; F. W. Qin ; N. Huang ; X. Jiang |
| 刊名 | Crystal Research and Technology
 |
| 出版日期 | 2012 |
| 卷号 | 47期号:2页码:207-212 |
| 关键词 | GaN nanowires nitride nanotubes field-emission growth tunability mechanism si |
| ISSN号 | 0232-1300 |
| 中文摘要 | In this work, P-doped GaN nanowires were synthesized in a co-deposition CVD process and the effects of P-doping on the microstructure and cathodoluminescence (CL) of GaN nanowires were studied in details. SEM observation and CL measurments demonstrated that P-doping has led to a rough morphology evolution and a depression of the band-gap emission of GaN nanowires, whereas the visible emission of GaN nanowires was obviously enhanced. Finally, the corresponding morphology transition and optical properties of GaN nanowires with P-doping were discussed. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| 原文出处 | |
| 公开日期 | 2013-02-05 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/60099]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | B. D. Liu,T. Hu,Z. E. Wang,et al. Microstructure and cathodoluminescence study of GaN nanowires without/with P-doping[J]. Crystal Research and Technology,2012,47(2):207-212. |
| APA | B. D. Liu.,T. Hu.,Z. E. Wang.,L. Z. Liu.,F. W. Qin.,...&X. Jiang.(2012).Microstructure and cathodoluminescence study of GaN nanowires without/with P-doping.Crystal Research and Technology,47(2),207-212. |
| MLA | B. D. Liu,et al."Microstructure and cathodoluminescence study of GaN nanowires without/with P-doping".Crystal Research and Technology 47.2(2012):207-212. |
入库方式： OAI收割
来源：金属研究所
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