Progress of graphene growth on copper by chemical vapor deposition: Growth behavior and controlled synthesis
文献类型：期刊论文
| 作者 | L. P. Ma ; W. C. Ren ; Z. L. Dong ; L. Q. Liu ; H. M. Cheng |
| 刊名 | Chinese Science Bulletin
 |
| 出版日期 | 2012 |
| 卷号 | 57期号:23页码:2995-2999 |
| 关键词 | graphene controlled growth chemical vapor deposition copper substrate bilayer graphene layer graphene films cu(111) foils |
| ISSN号 | 1001-6538 |
| 中文摘要 | Recently, chemical vapor deposition (CVD) on copper has been becoming a main method for preparing large-area and high- quality monolayer graphene. In this paper, we first briefly introduce the preliminary understanding of the microstructure and growth behavior of graphene on copper, and then focus on the recent progress on the quality improvement, number of layers control and transfer-free growth of graphene. In the end, we attempt to analyze the possible development of CVD growth of graphene in future, including the controlled growth of large-size single-crystal graphene and bilayer graphene with different stacking orders. |
| 原文出处 | |
| 公开日期 | 2013-02-05 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/60153]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | L. P. Ma,W. C. Ren,Z. L. Dong,et al. Progress of graphene growth on copper by chemical vapor deposition: Growth behavior and controlled synthesis[J]. Chinese Science Bulletin,2012,57(23):2995-2999. |
| APA | L. P. Ma,W. C. Ren,Z. L. Dong,L. Q. Liu,&H. M. Cheng.(2012).Progress of graphene growth on copper by chemical vapor deposition: Growth behavior and controlled synthesis.Chinese Science Bulletin,57(23),2995-2999. |
| MLA | L. P. Ma,et al."Progress of graphene growth on copper by chemical vapor deposition: Growth behavior and controlled synthesis".Chinese Science Bulletin 57.23(2012):2995-2999. |
入库方式： OAI收割
来源：金属研究所
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