Tunable Band Gaps and p-Type Transport Properties of Boron-Doped Graphenes by Controllable Ion Doping Using Reactive Microwave Plasma
文献类型：期刊论文
| 作者 | Y. B. Tang ; L. C. Yin ; Y. Yang ; X. H. Bo ; Y. L. Cao ; H. E. Wang ; W. J. Zhang ; I. Bello ; S. T. Lee ; H. M. Cheng ; C. S. Lee |
| 刊名 | Acs Nano
 |
| 出版日期 | 2012 |
| 卷号 | 6期号:3页码:1970-1978 |
| ISSN号 | 1936-0851 |
| 关键词 | graphene controllable doping tunable band gaps p-type transport properties boron-doped microwave plasma walled carbon nanotubes ray photoelectron-spectroscopy field-effect transistors high-quality electronic-properties epitaxial graphene films transparent deposition oxide |
| 中文摘要 | We report tunable band gaps and transport properties of B-doped graphenes that were achieved via controllable doping through reaction with the ion atmosphere of trimethylboron decomposed by microwave plasma. Both electron energy loss spectroscopy and X-ray photoemission spectroscopy analyses of the graphene reacted with ion atmosphere showed that B atoms are substitutionally incorporated into graphenes without segregation of B domains. The B content was adjusted over a range of 0-13.85 atom % by controlling the ion reaction time, from which the doping effects on transport properties were quantitatively evaluated. Electrical measurements from graphene field-effect transistors show that the B-doped graphenes have a distinct p-type conductivity with a current on/off ratio higher than 10(2). Especially, the band gap of graphenes is tuned from 0 to similar to 0.54 eV with Increasing B content, leading to a series of modulated transport properties. We believe the controllable doping for graphenes with predictable transport properties may pave a way for the development of graphene-based devices. |
| 原文出处 | |
| 公开日期 | 2013-02-05 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/60259]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | Y. B. Tang,L. C. Yin,Y. Yang,et al. Tunable Band Gaps and p-Type Transport Properties of Boron-Doped Graphenes by Controllable Ion Doping Using Reactive Microwave Plasma[J]. Acs Nano,2012,6(3):1970-1978. |
| APA | Y. B. Tang.,L. C. Yin.,Y. Yang.,X. H. Bo.,Y. L. Cao.,...&C. S. Lee.(2012).Tunable Band Gaps and p-Type Transport Properties of Boron-Doped Graphenes by Controllable Ion Doping Using Reactive Microwave Plasma.Acs Nano,6(3),1970-1978. |
| MLA | Y. B. Tang,et al."Tunable Band Gaps and p-Type Transport Properties of Boron-Doped Graphenes by Controllable Ion Doping Using Reactive Microwave Plasma".Acs Nano 6.3(2012):1970-1978. |
入库方式： OAI收割
来源：金属研究所
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