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Pyramidal dislocation induced strain relaxation in hexagonal structured InGaN/AlGaN/GaN multilayer
文献类型：期刊论文
| 作者 | P. F. Yan ; K. Du ; M. L. Sui |
| 刊名 | Journal of Applied Physics
 |
| 出版日期 | 2012 |
| 卷号 | 112期号:8 |
| 关键词 | quantum-well structures light-emitting-diodes deformation mechanisms metallic multilayers thin-films misfit dislocations ingan epilayers composites interfaces gan |
| ISSN号 | 0021-8979 |
| 中文摘要 | Due to the special dislocation slip systems in hexagonal lattice, dislocation dominated deformations in hexagonal structured multilayers are significantly different from that in cubic structured systems. In this work, we have studied the strain relaxation mechanism in hexagonal structured InGaN/AlGaN/GaN multilayers with transmission electron microscopy. Due to lattice mismatch, the strain relaxation was found initiated with the formation of pyramidal dislocations. Such dislocations locally lie at only one preferential slip direction in the hexagonal lattice. This preferential slip causes a shear stress along the basal planes and consequently leads to dissociation of pyramidal dislocations and operation of the basal plane slip system. The compressive InGaN layers and "weak" AlGaN/InGaN interfaces stimulate the dissociation of pyramidal dislocations at the interfaces. These results enhance the understanding of interactions between dislocations and layer interfaces and shed new lights on deformation mechanism in hexagonal-lattice multilayers. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4759353] |
| 原文出处 | |
| 公开日期 | 2013-02-05 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/60385]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | P. F. Yan,K. Du,M. L. Sui. Pyramidal dislocation induced strain relaxation in hexagonal structured InGaN/AlGaN/GaN multilayer[J]. Journal of Applied Physics,2012,112(8). |
| APA | P. F. Yan,K. Du,&M. L. Sui.(2012).Pyramidal dislocation induced strain relaxation in hexagonal structured InGaN/AlGaN/GaN multilayer.Journal of Applied Physics,112(8). |
| MLA | P. F. Yan,et al."Pyramidal dislocation induced strain relaxation in hexagonal structured InGaN/AlGaN/GaN multilayer".Journal of Applied Physics 112.8(2012). |
入库方式： OAI收割
来源：金属研究所
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