Multiferroic tunnel junctions
文献类型：期刊论文
| 作者 | Y. W. Yin ; M. Raju ; W. J. Hu ; X. J. Weng ; K. Zou ; J. Zhu ; X. G. Li ; Z. D. Zhang ; Q. Li |
| 刊名 | Frontiers of Physics
 |
| 出版日期 | 2012 |
| 卷号 | 7期号:4页码:380-385 |
| 关键词 | multiferroic tunnel junction ferroelectric film tunneling magnetoresistance effect tunneling electroresisitance effect magnetoelectric coupling complex oxide heterostructures ferroelectric control spin polarization room-temperature barriers films interfaces states |
| ISSN号 | 2095-0462 |
| 中文摘要 | Magnetic tunnel junctions with ferroelectric barriers, often referred to as multiferroic tunnel junctions, have been proposed recently to display new functionalities and new device concepts. One of the notable predictions is that the combination of two charge polarizing states and the parallel and antiparallel magnetic states could make it a four resistance state device. We have recently studied the ferroelectric tunneling using a scanning probe technique and multiferroic tunnel junctions using ferromagnetic La0.7Ca0.3MnO3 and La0.7Sr0.3MnO3 as the electrodes and ferroelectric (Ba, Sr)TiO3 as the barrier in trilayer planner junctions. We show that very thin (Ba, Sr)TiO3 films can sustain ferroelectricity up till room temperature. The multiferroic tunnel junctions show four resistance states as predicted and can operate at room temperatures. |
| 原文出处 | |
| 公开日期 | 2013-02-05 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/60417]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | Y. W. Yin,M. Raju,W. J. Hu,et al. Multiferroic tunnel junctions[J]. Frontiers of Physics,2012,7(4):380-385. |
| APA | Y. W. Yin.,M. Raju.,W. J. Hu.,X. J. Weng.,K. Zou.,...&Q. Li.(2012).Multiferroic tunnel junctions.Frontiers of Physics,7(4),380-385. |
| MLA | Y. W. Yin,et al."Multiferroic tunnel junctions".Frontiers of Physics 7.4(2012):380-385. |
入库方式： OAI收割
来源：金属研究所
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