Low-temperature (120 degrees C) growth of nanocrystalline silicon films prepared by plasma enhanced chemical vapor deposition from SiCl4/H-2 gases: Microstructure characterization
文献类型：期刊论文
| 作者 | L. Zhang ; J. H. Gao ; J. Q. Xiao ; L. S. Wen ; J. Gong ; C. Sun |
| 刊名 | Applied Surface Science
 |
| 出版日期 | 2012 |
| 卷号 | 258期号:7页码:3221-3226 |
| 关键词 | Nanocrystalline silicon PECVD Microstructure Raman spectra hydrogenated amorphous-silicon thin-films raman-spectroscopy solar-cells mechanism sih2cl2 |
| ISSN号 | 0169-4332 |
| 中文摘要 | Hydrogenated nanocrystalline silicon (nc-Si:H) films were prepared using diluted tetrachlorosilane (SiCl4) with various hydrogen flow rates (Hf) by plasma enhanced chemical vapor deposition (PECVD) at a constant substrate temperature (Ts) as low as 120 degrees C. Raman spectroscopy, transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), infrared spectra (IR) and spectroscopic ellipsometry (SE) were employed to investigate the microstructure and hydrogen bonding of the nc-Si: H films. Our results showed that the microstructure and hydrogen content of the films could be effectively tailored by the hydrogen flow rates, and a distinct transition from amorphous to nanocrystalline phase was observed with an increase of Hf. At an optimal preparation condition, a deposition rate was as high as 3.7 nm/min and the crystallinity reached up to 64.1%. In addition, the effect of hydrogen on the low-temperature growth of nc-Si:H film was proposed in relation to the surface reaction of radicals and the hydrogen diffusion in the surface growing region. (C) 2011 Elsevier B.V. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2013-02-05 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/60442]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | L. Zhang,J. H. Gao,J. Q. Xiao,et al. Low-temperature (120 degrees C) growth of nanocrystalline silicon films prepared by plasma enhanced chemical vapor deposition from SiCl4/H-2 gases: Microstructure characterization[J]. Applied Surface Science,2012,258(7):3221-3226. |
| APA | L. Zhang,J. H. Gao,J. Q. Xiao,L. S. Wen,J. Gong,&C. Sun.(2012).Low-temperature (120 degrees C) growth of nanocrystalline silicon films prepared by plasma enhanced chemical vapor deposition from SiCl4/H-2 gases: Microstructure characterization.Applied Surface Science,258(7),3221-3226. |
| MLA | L. Zhang,et al."Low-temperature (120 degrees C) growth of nanocrystalline silicon films prepared by plasma enhanced chemical vapor deposition from SiCl4/H-2 gases: Microstructure characterization".Applied Surface Science 258.7(2012):3221-3226. |
入库方式： OAI收割
来源：金属研究所
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