中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Strengthening of Ti-3(Si, Al)C-2 by Doping with Tungsten

文献类型:期刊论文

作者L. Y. Y. Zheng ; J. Y. Y. Wang ; J. X. X. Chen ; Y. C. C. Zhou
刊名Journal of the American Ceramic Society
出版日期2012
卷号95期号:12页码:3726-3728
关键词temperature mechanical-properties improved oxidation resistance ternary carbide ti3sic2 zirconium diboride composites additions nb al si
ISSN号0002-7820
中文摘要Improving the high-temperature strength and stiffness of Ti3SiC2 is the task of many investigations. However, methods for high-temperature strengthening have not been established although various ways are applicable to enhance the room-temperature mechanical properties of Ti3SiC2. In this work, we report that significant strengthening was realized at both room and high temperatures by incorporating a small amount of W into Ti3(Si, Al)C2. The onsite temperature for the rapid degradation of stiffness and strength moved more than 150 degrees C upward to over 1200 degrees C. The flexural strength of 5 at.% W-doped Ti3(Si, Al)C2 is 632.9 MPa at RT and 285 MPa at 1200 degrees C, being 176% and 170% of those for baseline material, respectively.
原文出处://WOS:000312145600006
公开日期2013-02-05
源URL[http://ir.imr.ac.cn/handle/321006/60501]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
L. Y. Y. Zheng,J. Y. Y. Wang,J. X. X. Chen,et al. Strengthening of Ti-3(Si, Al)C-2 by Doping with Tungsten[J]. Journal of the American Ceramic Society,2012,95(12):3726-3728.
APA L. Y. Y. Zheng,J. Y. Y. Wang,J. X. X. Chen,&Y. C. C. Zhou.(2012).Strengthening of Ti-3(Si, Al)C-2 by Doping with Tungsten.Journal of the American Ceramic Society,95(12),3726-3728.
MLA L. Y. Y. Zheng,et al."Strengthening of Ti-3(Si, Al)C-2 by Doping with Tungsten".Journal of the American Ceramic Society 95.12(2012):3726-3728.

入库方式: OAI收割

来源:金属研究所

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