Surface Morphology of Sn-Rich Solder Interconnects After Electrical Loading
文献类型：期刊论文
| 作者 | Q. S. Zhu ; H. Y. Liu ; Z. G. Wang ; J. K. Shang |
| 刊名 | Journal of Electronic Materials
 |
| 出版日期 | 2012 |
| 卷号 | 41期号:4页码:741-747 |
| 关键词 | Solder interconnect electromigration hillock grain boundary groove joints electromigration whisker copper tin cu |
| ISSN号 | 0361-5235 |
| 中文摘要 | Morphological changes from electromigration were examined on microsized Sn-Ag-Cu, pure Sn, and single-crystal Sn solder interconnects. It was found that both grain structure and alloying had a strong influence on the form of electromigration damage. In polycrystal Sn, grain boundary grooves were the primary form of electromigration damage, while in single-crystal Sn interconnects wavy surface relief appeared following electromigration. Alloying with Ag and Cu encouraged formation of Sn hillocks and Cu6Sn5 intermetallic compound (IMC) segregation. The grain boundary grooves were related to the divergence of the vacancy concentration at grain boundaries, which induced Sn grain tilting or sliding. Removal of the grain boundaries in the single-crystal interconnect made surface diffusion the primary electromigration mechanism, resulting in wavy surface relief after long electromigration time. In Sn-Ag-Cu alloy, directional flow of Cu caused Cu6Sn5 IMC segregation, which produced large compressive stress, driving the stressed grains to grow into hillocks. |
| 原文出处 | |
| 公开日期 | 2013-02-05 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/60541]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | Q. S. Zhu,H. Y. Liu,Z. G. Wang,et al. Surface Morphology of Sn-Rich Solder Interconnects After Electrical Loading[J]. Journal of Electronic Materials,2012,41(4):741-747. |
| APA | Q. S. Zhu,H. Y. Liu,Z. G. Wang,&J. K. Shang.(2012).Surface Morphology of Sn-Rich Solder Interconnects After Electrical Loading.Journal of Electronic Materials,41(4),741-747. |
| MLA | Q. S. Zhu,et al."Surface Morphology of Sn-Rich Solder Interconnects After Electrical Loading".Journal of Electronic Materials 41.4(2012):741-747. |
入库方式： OAI收割
来源：金属研究所
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