Two-dimensional electron gas mobility limited by barrier and quantum well thickness fluctuations scattering in AlxGa1-xN/GaN multi-quantum wells
文献类型：期刊论文
| 作者 | Liu, GP ; Wu, J ; Lu, YW ; Zhao, GJ ; Gu, CY ; Liu, CB ; Sang, L ; Yang, SY ; Liu, XL ; Zhu, QS ; Wang, ZG |
| 刊名 | applied physics letters
 |
| 出版日期 | 2012 |
| 卷号 | 100期号:16页码:162102 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23687]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Liu, GP,Wu, J,Lu, YW,et al. Two-dimensional electron gas mobility limited by barrier and quantum well thickness fluctuations scattering in AlxGa1-xN/GaN multi-quantum wells[J]. applied physics letters,2012,100(16):162102. |
| APA | Liu, GP.,Wu, J.,Lu, YW.,Zhao, GJ.,Gu, CY.,...&Wang, ZG.(2012).Two-dimensional electron gas mobility limited by barrier and quantum well thickness fluctuations scattering in AlxGa1-xN/GaN multi-quantum wells.applied physics letters,100(16),162102. |
| MLA | Liu, GP,et al."Two-dimensional electron gas mobility limited by barrier and quantum well thickness fluctuations scattering in AlxGa1-xN/GaN multi-quantum wells".applied physics letters 100.16(2012):162102. |
入库方式： OAI收割
来源：半导体研究所
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