Ultrashort Pulse Generation at Quasi-40-GHz by Using a Two-Section Passively Mode-Locked InGaAsP-InP Tensile Strained Quantum-Well Laser
文献类型：期刊论文
| 作者 | Kong, DH ; Zhu, HL ; Liang, S ; Qiu, JF ; Zhao, LJ |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2012 |
| 卷号 | 29期号:2页码:24201 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23713]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Kong, DH,Zhu, HL,Liang, S,et al. Ultrashort Pulse Generation at Quasi-40-GHz by Using a Two-Section Passively Mode-Locked InGaAsP-InP Tensile Strained Quantum-Well Laser[J]. chinese physics letters,2012,29(2):24201. |
| APA | Kong, DH,Zhu, HL,Liang, S,Qiu, JF,&Zhao, LJ.(2012).Ultrashort Pulse Generation at Quasi-40-GHz by Using a Two-Section Passively Mode-Locked InGaAsP-InP Tensile Strained Quantum-Well Laser.chinese physics letters,29(2),24201. |
| MLA | Kong, DH,et al."Ultrashort Pulse Generation at Quasi-40-GHz by Using a Two-Section Passively Mode-Locked InGaAsP-InP Tensile Strained Quantum-Well Laser".chinese physics letters 29.2(2012):24201. |
入库方式： OAI收割
来源：半导体研究所
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