Ferromagnetism and its stability in n-type Gd-doped GaN: First-principles calculation
文献类型:期刊论文
; | |
作者 | Liu, ZQ; Yi, XY; Wang, JW; Kang, J; Melton, AG; Shi, Y; Lu, N; Wang, JX; Li, JM; Ferguson, I |
刊名 | applied physics letters
![]() ![]() |
出版日期 | 2012 ; 2012 |
卷号 | 100期号:23页码:232408 |
学科主题 | 半导体器件 ; 半导体器件 |
收录类别 | SCI |
语种 | 英语 ; 英语 |
公开日期 | 2013-03-17 ; 2013-03-17 |
源URL | [http://ir.semi.ac.cn/handle/172111/23721] ![]() |
专题 | 半导体研究所_中科院半导体照明研发中心 |
推荐引用方式 GB/T 7714 | Liu, ZQ,Yi, XY,Wang, JW,et al. Ferromagnetism and its stability in n-type Gd-doped GaN: First-principles calculation, Ferromagnetism and its stability in n-type Gd-doped GaN: First-principles calculation[J]. applied physics letters, APPLIED PHYSICS LETTERS,2012, 2012,100, 100(23):232408, 232408. |
APA | Liu, ZQ.,Yi, XY.,Wang, JW.,Kang, J.,Melton, AG.,...&Ferguson, I.(2012).Ferromagnetism and its stability in n-type Gd-doped GaN: First-principles calculation.applied physics letters,100(23),232408. |
MLA | Liu, ZQ,et al."Ferromagnetism and its stability in n-type Gd-doped GaN: First-principles calculation".applied physics letters 100.23(2012):232408. |
入库方式: OAI收割
来源:半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。