Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres
文献类型：期刊论文
| ; | |
| 作者 | Wei, TB; Chen, Y; Hu, Q; Yang, JK; Huo, ZQ; Duan, RF; Wang, JX; Zeng, YP; Li, JM; Liao, YX |
| 刊名 | materials letters
 ; MATERIALS LETTERS
|
| 出版日期 | 2012 ; 2012 |
| 卷号 | 68页码:327-330 |
| 学科主题 | 半导体材料 ; 半导体材料 |
| 收录类别 | SCI |
| 公开日期 | 2013-03-17 ; 2013-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23651]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Wei, TB,Chen, Y,Hu, Q,et al. Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres, Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres[J]. materials letters, MATERIALS LETTERS,2012, 2012,68, 68:327-330, 327-330. |
| APA | Wei, TB.,Chen, Y.,Hu, Q.,Yang, JK.,Huo, ZQ.,...&Yin, FT.(2012).Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres.materials letters,68,327-330. |
| MLA | Wei, TB,et al."Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres".materials letters 68(2012):327-330. |
入库方式： OAI收割
来源：半导体研究所
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