Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes
文献类型：期刊论文
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| 作者 | Le LC (Le, L. C.); Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Zhang SM (Zhang, S. M.); Yang H (Yang, H.); Li L (Li, L.); Wu LL (Wu, L. L.); Chen P (Chen, P.); Liu ZS (Liu, Z. S.); Li ZC (Li, Z. C.) |
| 刊名 | applied physics letters
 ; APPLIED PHYSICS LETTERS
|
| 出版日期 | 2012 ; 2012 |
| 卷号 | 101期号:25页码:252110 |
| 学科主题 | 光电子学 ; 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2013-03-20 ; 2013-03-20 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23736]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Le LC ,Zhao DG ,Jiang DS ,et al. Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes, Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes[J]. applied physics letters, APPLIED PHYSICS LETTERS,2012, 2012,101, 101(25):252110, 252110. |
| APA | Le LC .,Zhao DG .,Jiang DS .,Zhang SM .,Yang H .,...&Wang H .(2012).Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes.applied physics letters,101(25),252110. |
| MLA | Le LC ,et al."Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes".applied physics letters 101.25(2012):252110. |
入库方式： OAI收割
来源：半导体研究所
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