Room temperature direct-bandgap electroluminescence from n-type strain-compensated Ge/SiGe multiple quantum wells
文献类型：期刊论文
| ; | |
| 作者 | Liu Z (Liu, Zhi); Hu WX (Hu, Weixuan); Li C (Li, Chong); Li YM (Li, Yaming); Xue CL (Xue, Chunlai); Li CB (Li, Chuanbo); Zuo YH (Zuo, Yuhua); Cheng BW (Cheng, Buwen); Wang QM (Wang, Qiming) |
| 刊名 | applied physics letters
 ; APPLIED PHYSICS LETTERS
|
| 出版日期 | 2012 ; 2012 |
| 卷号 | 101期号:23页码:231108 |
| 关键词 | LIGHT-EMITTING-DIODES GE SI SILICON GAIN GAP Light-emitting-diodes Ge Si Silicon Gain Gap |
| 学科主题 | 光电子学 ; 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2013-03-20 ; 2013-03-20 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23739]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Liu Z ,Hu WX ,Li C ,et al. Room temperature direct-bandgap electroluminescence from n-type strain-compensated Ge/SiGe multiple quantum wells, Room temperature direct-bandgap electroluminescence from n-type strain-compensated Ge/SiGe multiple quantum wells[J]. applied physics letters, APPLIED PHYSICS LETTERS,2012, 2012,101, 101(23):231108, 231108. |
| APA | Liu Z .,Hu WX .,Li C .,Li YM .,Xue CL .,...&Wang QM .(2012).Room temperature direct-bandgap electroluminescence from n-type strain-compensated Ge/SiGe multiple quantum wells.applied physics letters,101(23),231108. |
| MLA | Liu Z ,et al."Room temperature direct-bandgap electroluminescence from n-type strain-compensated Ge/SiGe multiple quantum wells".applied physics letters 101.23(2012):231108. |
入库方式： OAI收割
来源：半导体研究所
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