The Effects of Femtosecond Laser Irradiation and Thermal Annealing on the Optoelectronic Properties of Silicon Supersaturated with Sulfur
文献类型：期刊论文
| 作者 | Hu, SX ; Han, PD ; Gao, LP ; Mao, X ; Li, XY ; Fan, YJ |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2012 |
| 卷号 | 29期号:4页码:46101 |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23643]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Hu, SX,Han, PD,Gao, LP,et al. The Effects of Femtosecond Laser Irradiation and Thermal Annealing on the Optoelectronic Properties of Silicon Supersaturated with Sulfur[J]. chinese physics letters,2012,29(4):46101. |
| APA | Hu, SX,Han, PD,Gao, LP,Mao, X,Li, XY,&Fan, YJ.(2012).The Effects of Femtosecond Laser Irradiation and Thermal Annealing on the Optoelectronic Properties of Silicon Supersaturated with Sulfur.chinese physics letters,29(4),46101. |
| MLA | Hu, SX,et al."The Effects of Femtosecond Laser Irradiation and Thermal Annealing on the Optoelectronic Properties of Silicon Supersaturated with Sulfur".chinese physics letters 29.4(2012):46101. |
入库方式： OAI收割
来源：半导体研究所
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