A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures
文献类型：期刊论文
| 作者 | Ding JQ (Ding, Jieqin) ; Wang XL (Wang, Xiaoliang) ; Xiao HL (Xiao, Hongling) ; Wang CM (Wang, Cuimei) ; Chen H (Chen, Hong) ; Bi Y (Bi, Yang) ; Deng QW (Deng, Qinwen) ; Zhang JW (Zhang, Jingwen) ; Hou X (Hou, Xun) |
| 刊名 | applied physics letters
 |
| 出版日期 | 2012 |
| 卷号 | 101期号:18页码:182102 |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-03-26 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23761]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Ding JQ ,Wang XL ,Xiao HL ,et al. A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures[J]. applied physics letters,2012,101(18):182102. |
| APA | Ding JQ .,Wang XL .,Xiao HL .,Wang CM .,Chen H .,...&Hou X .(2012).A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures.applied physics letters,101(18),182102. |
| MLA | Ding JQ ,et al."A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures".applied physics letters 101.18(2012):182102. |
入库方式： OAI收割
来源：半导体研究所
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