中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Depth profile of the tetragonal distortion in thick GaMnAs layers grown on GaAs by Rutherford backscattering/channeling

文献类型:期刊论文

;
作者Zhou SQ (Zhou, Shengqiang); Chen L (Chen, Lin); Shalimov A (Shalimov, Artem); Zhao JH (Zhao, Jianhua); Helm M (Helm, Manfred)
刊名aip advances ; AIP ADVANCES
出版日期2012 ; 2012
卷号2期号:4页码:042102
学科主题半导体物理 ; 半导体物理
收录类别SCI
语种英语 ; 英语
公开日期2013-03-26 ; 2013-03-26
源URL[http://ir.semi.ac.cn/handle/172111/23760]  
专题半导体研究所_半导体超晶格国家重点实验室
推荐引用方式
GB/T 7714
Zhou SQ ,Chen L ,Shalimov A ,et al. Depth profile of the tetragonal distortion in thick GaMnAs layers grown on GaAs by Rutherford backscattering/channeling, Depth profile of the tetragonal distortion in thick GaMnAs layers grown on GaAs by Rutherford backscattering/channeling[J]. aip advances, AIP ADVANCES,2012, 2012,2, 2(4):042102, 042102.
APA Zhou SQ ,Chen L ,Shalimov A ,Zhao JH ,&Helm M .(2012).Depth profile of the tetragonal distortion in thick GaMnAs layers grown on GaAs by Rutherford backscattering/channeling.aip advances,2(4),042102.
MLA Zhou SQ ,et al."Depth profile of the tetragonal distortion in thick GaMnAs layers grown on GaAs by Rutherford backscattering/channeling".aip advances 2.4(2012):042102.

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来源:半导体研究所

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