Growth of large domain epitaxial graphene on the C-face of SiC
文献类型：期刊论文
| ; | |
| 作者 | Zhang R (Zhang, Rui); Dong YL (Dong, Yunliang); Kong WJ (Kong, Wenjie); Han WP (Han, Wenpeng); Tan PH (Tan, Pingheng); Liao ZM (Liao, Zhimin); Wu XS (Wu, Xiaosong); Yu DP (Yu, Dapeng) |
| 刊名 | journal of applied physics
 ; JOURNAL OF APPLIED PHYSICS
|
| 出版日期 | 2012 ; 2012 |
| 卷号 | 112期号:10页码:104307 |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2013-03-26 ; 2013-03-26 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23766]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Zhang R ,Dong YL ,Kong WJ ,et al. Growth of large domain epitaxial graphene on the C-face of SiC, Growth of large domain epitaxial graphene on the C-face of SiC[J]. journal of applied physics, JOURNAL OF APPLIED PHYSICS,2012, 2012,112, 112(10):104307, 104307. |
| APA | Zhang R .,Dong YL .,Kong WJ .,Han WP .,Tan PH .,...&Yu DP .(2012).Growth of large domain epitaxial graphene on the C-face of SiC.journal of applied physics,112(10),104307. |
| MLA | Zhang R ,et al."Growth of large domain epitaxial graphene on the C-face of SiC".journal of applied physics 112.10(2012):104307. |
入库方式： OAI收割
来源：半导体研究所
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