Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2
文献类型：期刊论文
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| 作者 | Tongay S (Tongay, Sefaattin); Zhou J (Zhou, Jian); Ataca C (Ataca, Can); Lo K (Lo, Kelvin); Matthews TS (Matthews, Tyler S.); Li JB (Li, Jingbo); Grossman JC (Grossman, Jeffrey C.); Wu JQ (Wu, Junqiao) |
| 刊名 | nano letters
 ; NANO LETTERS
|
| 出版日期 | 2012 ; 2012 |
| 卷号 | 12期号:11页码:5576-5580 |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2013-03-26 ; 2013-03-26 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23781]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Tongay S ,Zhou J ,Ataca C ,et al. Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2, Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2[J]. nano letters, NANO LETTERS,2012, 2012,12, 12(11):5576-5580, 5576-5580. |
| APA | Tongay S .,Zhou J .,Ataca C .,Lo K .,Matthews TS .,...&Wu JQ .(2012).Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2.nano letters,12(11),5576-5580. |
| MLA | Tongay S ,et al."Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2".nano letters 12.11(2012):5576-5580. |
入库方式： OAI收割
来源：半导体研究所
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