Enhanced tunneling in the GaAs p(+)-n(+) junction by embedding InAs quantum dots
文献类型：期刊论文
| ; | |
| 作者 | Wang LJ (Wang, Lijuan); He JF (He, Jifang); Shang XJ (Shang, Xiangjun); Li MF (Li, Mifeng); Yu Y (Yu, Ying); Zha GW (Zha, Guowei); Ni HQ (Ni, Haiqiao); Niu ZC (Niu, Zhichuan) |
| 刊名 | semiconductor science and technology
 ; SEMICONDUCTOR SCIENCE AND TECHNOLOGY
|
| 出版日期 | 2012 ; 2012 |
| 卷号 | 27期号:11页码:115010 |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2013-03-26 ; 2013-03-26 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23784]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Wang LJ ,He JF ,Shang XJ ,et al. Enhanced tunneling in the GaAs p(+)-n(+) junction by embedding InAs quantum dots, Enhanced tunneling in the GaAs p(+)-n(+) junction by embedding InAs quantum dots[J]. semiconductor science and technology, SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2012, 2012,27, 27(11):115010, 115010. |
| APA | Wang LJ .,He JF .,Shang XJ .,Li MF .,Yu Y .,...&Niu ZC .(2012).Enhanced tunneling in the GaAs p(+)-n(+) junction by embedding InAs quantum dots.semiconductor science and technology,27(11),115010. |
| MLA | Wang LJ ,et al."Enhanced tunneling in the GaAs p(+)-n(+) junction by embedding InAs quantum dots".semiconductor science and technology 27.11(2012):115010. |
入库方式： OAI收割
来源：半导体研究所
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