The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy
文献类型：期刊论文
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| 作者 | Huang X; Zhang XH ; Zhu YG; Li T; Han LF; Shang XJ; Ni HQ; Niu ZC; Zhang, XH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail Address: xinhuiz@semi.ac.cn
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| 刊名 | optics communications
 ; OPTICS COMMUNICATIONS
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| 出版日期 | 2010 ; 2010 |
| 卷号 | 283期号:7页码:1510-1513 |
| 关键词 | InAs quantum dots Inas Quantum Dots Nonlinear Refraction Reflection Z-scan Reflection Z-scan Optical Nonlinearities 2-photon Absorption Saturable Absorber Well Structures Single-beam Electroabsorption Dispersion Solids Gaas Nonlinear refraction Reflection Z-scan REFLECTION Z-SCAN OPTICAL NONLINEARITIES 2-PHOTON ABSORPTION SATURABLE ABSORBER WELL STRUCTURES SINGLE-BEAM ELECTROABSORPTION DISPERSION SOLIDS GAAS |
| 通讯作者 | zhang, xh, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. e-mail address: xinhuiz@semi.ac.cn |
| 合作状况 | 其它 |
| 英文摘要 | the third-order optical nonlinear refractive properties of inas/gaas quantum dots grown by molecular beam epitaxy have been measured using the reflection z-scan technique at above-bandgap energy. the nonlinear refractive index and nonlinear absorption index of the inas/gaas quantum dots were determined for wavelengths from 740 to 777 nm. the measured results are compared with the nonlinear refractive response of several typical iii-v group semiconductor materials. the corresponding mechanisms responsible for the large nonlinear response are discussed.; The third-order optical nonlinear refractive properties of InAs/GaAs quantum dots grown by molecular beam epitaxy have been measured using the reflection Z-scan technique at above-bandgap energy. The nonlinear refractive index and nonlinear absorption index of the InAs/GaAs quantum dots were determined for wavelengths from 740 to 777 nm. The measured results are compared with the nonlinear refractive response of several typical III-V group semiconductor materials. The corresponding mechanisms responsible for the large nonlinear response are discussed.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-22t13:23:40z no. of bitstreams: 1 the refractive nonlinearities of inasgaas quantum dots above-bandgap energy .pdf: 373554 bytes, checksum: 241a3fb44d1b23bb2077a67e0db2a405 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-04-22t13:38:55z (gmt) no. of bitstreams: 1 the refractive nonlinearities of inasgaas quantum dots above-bandgap energy .pdf: 373554 bytes, checksum: 241a3fb44d1b23bb2077a67e0db2a405 (md5); made available in dspace on 2010-04-22t13:38:55z (gmt). no. of bitstreams: 1 the refractive nonlinearities of inasgaas quantum dots above-bandgap energy .pdf: 373554 bytes, checksum: 241a3fb44d1b23bb2077a67e0db2a405 (md5) previous issue date: 2010; national natural science foundation of china 10674131 60625405 10734060; 其它 |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china 10674131 60625405 10734060 |
| 语种 | 英语 ; 英语 |
| 资助机构 | National Natural Science Foundation of China 10674131 60625405 10734060 |
| 公开日期 | 2010-04-22 ; 2010-04-22 ; 2010-10-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11181]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 通讯作者 | Zhang, XH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail Address: xinhuiz@semi.ac.cn |
| 推荐引用方式 GB/T 7714 | Huang X,Zhang XH,Zhu YG,et al. The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy, The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy[J]. optics communications, OPTICS COMMUNICATIONS,2010, 2010,283, 283(7):1510-1513, 1510-1513. |
| APA | Huang X.,Zhang XH.,Zhu YG.,Li T.,Han LF.,...&Zhang, XH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail Address: xinhuiz@semi.ac.cn.(2010).The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy.optics communications,283(7),1510-1513. |
| MLA | Huang X,et al."The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy".optics communications 283.7(2010):1510-1513. |
入库方式： OAI收割
来源：半导体研究所
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